Thursday, 3 October 2013

sub: Microprocessor and its application (utu previous year question papers

utu previous year question papers
sub: Microprocessor and its application
sem 4th , B.tech
back paper examination



time : 3 hrs
calculator is not allowed;

Q1: Attempt any four parts:
  1. Draw the block diagram of microprocessor and explain it in brief.
  2. Explain the physical address formation with the segment and offset words.
  3. Discus the improvement of intel 8086 over intel 8085 microprecessor.
  4. Describe the function of the 8086 queue. How does the queue speed up processing.
  5. Discuss the features of 8085 interrupts. Also explain the SIM and RIM formats.
  6. Describe memory segmentation? How can it generate the physical address, explain with example.
Q2: Attempt any four parts:
  1. Draw the architecture of 8086 microprocessor and explain it in brief. 
  2. Discuss various types of addressing modes of Intel 8085 with suitable examples.
  3. Explain the various data transfer techniques.
  4. Draw the pin dia of 8085 microprocessor.
  5. explain the minimum mode of operation in 8086 microprocessor.
  6. Explain the instruction : SHLD 16-bit addr, DAA, STA 16 bit addr.

Friday, 30 August 2013

important question for viva test of workshop

                  Utu previous year question papers.

some most important question for viva test of workshop.



  1. What is turning?
  2. Write or tell us operation of lathe machine?
  3. Write name of 10 parts of lathe machine.
  4. What is feed?
  5. What is depth of cut?
  6. What is the formula of cutting speed of lathe machine?
  7. Write the formula of taper angle?
  8. How you denote Lathe machine on basis of size?
  9. What is function of Lathe machine?
  10. Which shape of Job can be made by Lathe Machine?
  11. Which dimensions can be measured by Vernier caliper?
  12. What is least count?
  13. What is the least count of vernier caliper?
  14. Which type of material can be processed under lathe machine?
  15. What is the least count of micrometer 

Sunday, 18 August 2013

SOLID STATE DEVICES AND SEMICONDUCTOR (SSDC)

SOLID STATE DEVICES AND SEMICONDUCTOR (SSDC)
SEM-IV, 2013
UTU PREVIOUS YEAR QUESTION PAPERS

TIME: 2 hour
Max. Marks: 50

Note: Attempt all the questions. Assume suitable data if necessary.

 Attempt any four parts of the following:
  1. Explain briefly about the Zener diode as shunt regulator.
  2. Describe about the superconductor materials.
  3. A LED materials energy gap equals 2.5 eV. What wavelength will it radiate?
  4. Write a short note on Insulated Gate Bipolar Transistor (IGBT).
  5. Write the merits and demerits of Gunn diode.
  6. Name and explain the three conditions for lasing action.

Tuesday, 6 August 2013

ANALOG INTEGRATED CIRCUIT (AIC)

ANALOG INTEGRATED CIRCUIT
(AIC)
SEM-IV, 2013
B TECH EXAMINATION
utu previous year question paper

TIME: 3 hour
Max. Marks: 100

Note: Attempt all the questions. Assume suitable data if necessary.

Attempt any four parts of the following:
  1. Explain Slew rate and its effect on operation of Op-amp.
  2. Draw and explain the circuit to generate triangular wave using op-amp.
  3. Explain source follower circuit. Discuss its input impedance in detail.
  4. Explain the common source amplifier and find the expression for gain.
  5. Explain about the crossover and harmonic distortion.
  6. Draw and explain cascade current mirror circuit.

Friday, 2 August 2013

Electronic device and circuits (utu question paper)

ELECTRONIC DEVICE AND CIRCUIT
SEM-III, 2011-12
UTU PREVIOUS YEAR QUESTION PAPERS

time : 3hr] 
Total marks :100
SECTION A
Q1:- Attempt any four of the following :
  1. Distinguish between
    (i) intrinsic semiconductor and extrinsic semiconductor
    (ii) energy level and energy band
  2. A silicon p-n junction employs the following doping levels : NA = 1 x 106 cm-3 and  ND = 5 x 1015 cm-3 . Determine the hole and electron concentration on the two sides.
     [ For silicon, 
    ni  = 1.08 x 1010   cm-3]
  3. Due to manufacturing error, the p-side of a pn junction has not been doped. If    ND = 3 x 1016 cm-3, calculate the built in potential at T = 300 K.
  4. In the junction shown in fig 1, the depletion region has a width of b on the n side and a on the p side. Sketch the electric field as a function of x.
    utu previous year qus paper
    FIG.1
  5. Find the resistivity of intrinsic Si at 300 K.
    ( μn = 1350 cm2 /V –s and μp = 480 cm2 /v –s ) and (n1  = 1.5 x 1010   cm-3).
  6. Discuss the role of Ebers Moll and Hybrid- pi model used for BJT.

Thursday, 1 August 2013

COMPUTER GRAPHIC

COMPUTER GRAPHIC

SEM-V, 2012
UTU PREVIOUS YEAR QUESTION PAPERS


Time :3 hrs

Total marks :100
Attempt any two of the following:
  1. List and explain some applications for large screen displays.
  2. Define the following terms:(i) Primitive devices(ii) Display file structure(iii) Display control text
  3. Set up a parallel version of Bresenham's algorithm for straight lines of any slope.
Attempt any two of the following: 

  1. Discuss various methods of storing the edge list and their relative merits for pattern filling.
  2. Explain the following:(i) Segments(ii) Segment table(iii) Creating, deleting and renaming segments.

Sunday, 28 July 2013

FUNDAMENTAL OF ELECTRONICS

FUNDAMENTAL OF ELECTRONICS ENGINEERING
SEM-I, 2011
UTU PREVIOUS YEAR QUESTION PAPERS

Time: 3 hours
Total marks: 100
Attempt any four parts:
  1. What happens to the conductivity of semiconductors with the rise in temperature? Compare with the conductivity of metals.
  2. What is meant by Fermi level in semiconductor?
  3. At room temperature, the reverse saturation current is 0.3µA when a reverse bias is applied to a Ge diode. Find the value of current flowing in diode when 0.15V forward bias is applied.
  4. Define conductivity. Derive the expression of conductivity in intrinsic and extrinsic semiconductors.
  5. Explain the formation of depletion layer in a p-n junction diode.
  6. Explain the transition capacitance and diffusion capacitance of a p-n junction diode.

Tuesday, 23 July 2013

BASIC ELECTRONICS

BASIC ELECTRONICS
SEM-I, 2010-11
B TECH QUESTION PAPERS
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 3 Hours
Total Marks: 100
Note: Attempt all questions

Attempt any four parts of the following:
  1. Draw the simplified energy level diagram of a solid.
  2. On the basis of energy band gap theory, explain the formation of valence band. Differentiate among conductors, insulators and semiconductors.
  3. Define the term conductivity, intrinsic concentration and energy gap of semiconductors.
  4. The mobilities of free electrons and holes in a pure germanium are 0.38 and 0.18 m2/V-s. Find the value of intrinsic conductivity. Assume n =2.5 x 1019/m3 at room temperature.
  5. A sample of silicon is doped with phosphorous to a density of 1021/m3 as well as Boron to a density of 5 x 1020/m3. What will be conductivity of the Si sample? The electron mobility in silicon is 0.18 m2/V-s.

Tuesday, 16 July 2013

ENGINEERING PHYSICS

ENGINEERING PHYSICS
SEM-I, 2013
B TECH QUESTION PAPERS
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

TIME: 3 HOURS
TOTAL MARKS: 100
Attempt any four:
5×4=20
  1. What is Galilean Transformation? Derive Galilean transformation equations.
  2. The rest mass of an electron is 9.1 ×10-28gm. What will be its mass if it moving with of speed of light.Also deducts the fraction increase of mass of a particle for velocity 0.1 c.
  3. Deduct Einstein mass energy relation equation,considering the variation of mass with velocity.
  4. What is black body? State and explain Kirchhoff's law of heat radiations.
  5. What is meant by black body radiation? Explain briefly the energy distribution in a black body spectrum with diagram.
  6. What is Compton effect? Derive an expression for the frequency of the scattered photon in terms of the frequency of the incident radiation and scattering angle.

Thursday, 11 July 2013

ELECTROMAGNETIC FIELD THEORY

ELECTROMAGNETIC FIELD THEORY
(EMFT)
SEM-IV, 2011
B TECH QUESTION PAPERS
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 3 hours
Total marks:100
Attempt any four part of the following
  1. State and explain Divergence theorem in detail.
  2. Explain the cylindrical coordinate system with the concept of incremental length.
  3. Two charges of similar sign and magnitude 1×10-12 C are located one meter apart. What is the potential at a point that is midway between the two charges and 50cm from the line connecting the charges?
  4. Find the divergence of A? If A = rsinΦIr+2rcosΦIΦ+2Z2Iz
  5. Find the field of a sheet of charge in which symmetry is about plane?
  6. Find the constant a, b, c so that V = i(x + 2y + az) + j(bx – 3y – z) + k(4x + cy + 2z) is irrational.

ANALOG INTEGRATED CIRCUITS (utu previous year question papers)

ANALOG INTEGRATED CIRCUITS
SEM-IV, 2011
B TECH QUESTION PAPER
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 3 hours
Total marks: 100

Attempt any four of the following:
  1. Draw and explain the working of Wilson current mirror circuit and its improved version.
  2. Design a Widlar current source for operating a constant current Io=10µA. Assume VCC=10 V, VBE= 0.7 V and β =125 (use VT= 25 mV).
  3. Draw and explain the circuit of a VBE multiplier.
  4. When does a current mirror circuit deviates from the ideal condition?
  5. Why is cascade configuration used in an Op-amp? Are FET op-amp better than BJT?
  6. Explain MOS current steering circuits in brief.

Saturday, 6 July 2013

FUNDAMENTAL OF ELECTRONICS ENGINEERING (utu previous year question papers)

FUNDAMENTAL OF ELECTRONICS ENGINEERING
SEM-II, 2013
B TECH QUESTION PAPER
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 3 Hours
Total Marks: 100
Attempt any four parts of the following:
  1. Define Semiconductor materials on the basis of energy band diagram with example.
  2. How electron hole pairs are generated. Explain working of different forms of semiconductors.
  3. Why Si is preferred over Ge for manufacturing of electronics devices. How Semiconductors diode behave as switch.
  4. Explain the effect of temperature on I-V characteristics of p-n junction diode.
  5. Differentiate between extrinsic and intrinsic semiconductor on the basis of impurity present in them.
  6. Explain the working of Semiconductor diode at different biasing conditions, no bias, forward bias & reverse bias condition.

Friday, 5 July 2013

(UTU) Mba old year question paper sub: Financial Insitutions and Markets

Uttrakhand Technical University
(UTU) Mba old year question paper
sub: Financial Instiutions and Markets
sem- 3rd

total marks: 70
time 3 hrs
Q1: Answer any four parts.

  1. What is a financial system? Explain the constituents of the financial system.
  2. List the latest development which have taken place is the Indian financial system.
  3. Distinguish between capital market and money market.
  4. Differentiate between primary market and secondary market.
  5. Discuss venture capital funds as a type of financial services.
  6. What do you mean by indigenous bankers?

Thursday, 4 July 2013

MATHEMATICS-I (utu previous year question papers)

MATHEMATICS-I
SEM-I, 2012-13
B.TECH EXAMINATION
UTTARAKHAND TECHNICAL UNIVERSITY
utu previous year question papers

Time: 3 hours
Total marks: 100
Attempt any four parts of the following:
  1. Reduce the following matrix to row echelon form and finds its rank:
  2. Examine whether the following set of vectors is linearly independent and also find the dimension and the basis of the vectors:
    (1, 1, 0, 1), (1, 1, 1, 1), (-1, 1, 1, 1), (1, 0, 0, 1)
  3. Check whether the following system is consistent, if it is then find its solution.
  4. Verify Cayley-Hamilton theorem for the matrix

    Also obtain A-1
  5. Find the eigenvalues and corresponding eigenvectors of the given matrix:
  6. The eigenvectors of a 3x3 matrix A corresponding to the eigenvalues 1, 1, 3 are [1, 0, -1]T, [0, 1, -1]T and [1, 1, 0]T respectively. Find the matrix A.

MBA old year question papers sub: marketing of services

Uttarakhand Technical University
 (utu)
MBA old year question papers
sub: marketing of services
(A Marketing Management Group)

Note: Attempt only Five Questions:
          All questions carry equal marks.

time 3hrs
marks: 70 
Q1: Attempt any four out of following:
  1. Service encounter.
  2. Word of mouth.
  3. The Gap Model of Services Quality.
  4. Moment of truth.
  5. Media gets angulfed by competition.
  6. Extended marketing mix.
Q2: (A) What do you understand by the service quality? Explain the six steps approach of implementing quality service.
     (B) Utilizing the servuction model. Describe your experience with any service provider you had chance to interact with.

UTU MBA old year question paper sub: Strategic Management

UTU MBA previous year question paper
sub: Strategic Management (2010-2011)
sem- 3rd

marks:70,
 time 3hrs
Q1: Answer any four question.
  1. Define the term strategic management. Briefly describe the main objectives of strategic management.
  2. Explain the strategic management process.
  3. Define strategy. How strategy and policy work together in an organization.
  4. Explain the importance of vision and mission statement for an organization.
  5. what are the forces which help to formulate objectives and goals?
  6. Enumerate the components of strategic decision making.

Tuesday, 2 July 2013

DISCRETE STRUCTURE

DISCRETE STRUCTURE
SEM-III, 2012-13
B.TECH EXAMINATION
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 3 Hours
Total Marks: 100
Do any four Questions:
  1. Draw Venn Diagram for (A ∩ B) ⋃ C.
  2. If f: R→R is a function such that f(x) = 3x + 5 prove that f is one - one onto. Also find the inverse of f.
  3. Determine the number of integer solutions to the equation:
    x1 + x2 + x3 + x4 = 7
    where xi > =0 for all i = 1,2,3,4
  4. Confirm or disprove the following identities:
    (A ⋃ B) X (C ⋃ D) = (A X C) ⋃ (B X D)
  5. Let {A1, A2 ...Ak} be a partition of set A. We define a binary relation R on A such that an ordered pair (a, b) is in R if and only if a and b are in the same block of the partition. Show that R is an equivalence relation.
  6. Show that among n+1 positive integers less than or equal to 2n there are two of them that are relative prime.

DIGITAL ELECTRONICS & DESIGN (utu previous year question papers)

DIGITAL ELECTRONICS & DESIGN ASPECTS
SEM-III, 2012-13
B.TECH EXAMINATION
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 3 Hours
Total Marks: 100
Attempt any four parts of the following:
  1. Determine the base b in each of the following cases:
    (a) (361)10 = (551)b
    (b) (859)10 = (5B7)b
  2. Write the 8-bit signed magnitude , 2's complement and 1's complement from the following decimal numbers:
    (a) +119
    (b) -77
  3. Write out the first ten number for a decimal weighted codes: 7, 4, 2, 1
  4. Using the theorems of Boolean algebra simplify the following expression:
  5. What is difference between a Latch and a flip-flop?
  6. What is race around condition and how it is overcome?

Monday, 1 July 2013

POWER SYSTEM ANALYSIS (utu previous year question papers)

POWER SYSTEM ANALYSIS
SEM-VI, 2010
B.TECH EXAMINATION
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 3 hours
Total Marks:100
Attempt any four of the following:
  1. One conductor of a three phase line is open. The current flowing to the connected load through a line is 10A. With the current in line a as reference and assuming that line c is open, find the symmetrical components of the line currents.
  2. The line to ground voltages on the high voltage sides of a step up transformer are 100 kV, 33 kV and 38 kV on phases a, b and c respectively. The voltage of phase a leads that of phase b by 100o and lags that of phase c by 176.5o. Determine analytically the symmetrical components of voltage.
  3. The line currents in amperes in phase a, b and c respectively is 500+j150, 100-j600 and -300+j600 referred to the same reference vector. Find the symmetrical components of the currents.
  4. Three identical Y connected resistors from a load bank with a three phase rating of 2300 V and 500 kVA. If the load bank has applied voltages |Vab| = 1840 V, |Vbc| = 2760 V and |Vca| = 2300 V, find the line voltages and currents in per unit into the load. Assume that the neutral system and select a base of 2300 V, 500 kVA.
  5. A 25 MVA, 13.2 kV alternators with solidly grounded neutral has a sub transient reactance of 0.25 pu. The negative and zero sequence reactance are 0.35 and 0.1 pu. A single line to ground fault occurs at the terminals of an unloaded alternator, determine the fault current.
  6. Draw the zero sequence equivalent circuit of 3 phase transformer for various possible combinations.

Friday, 28 June 2013

POWER ELECTRONICS

POWER ELECTRONICS
SEM-VI, 2012
B.TECH EXAMINATION
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: Hours
Total Marks: 100
Note: Attempt all question. Use of calculator is permitted.

Answer any four parts of the following:
  1. What are the different methods of firing employed for SCR triggering? Explain UJT firing circuit with relevant waveforms.
  2. Discuss the two transistor model of thyristor and derive an expression for the anode current.
  3. Draw the static V-I characteristics of SCR and explain its mode of operation.
  4. Name the different power electronic converters available and list their advantages over conventional modes of conversion and control.
  5. What are the characteristics of n ideal power switching device? Compare the characteristics of IGBT and MOSFET.
  6. Draw & Explain the circuit diagram for turning on & Turning off operation of a G.T.O.

SYSTEM ENGINEERING (utu previous year question paper)

SYSTEM ENGINEERING
SEM-V, 2011-12
B.TECH EXAMINATION
utu previous year question paper

Time: 3 hours
Total Marks: 100
Attempt any four parts:
  1. What is open loop and closed loop system? Give advantages and disadvantages of closed loop control system.
  2. Explain force-voltage analogy with relevant diagram and equations.
  3. Draw f-i analog system of Fig. 1.
    SYSTEM ENGINEERING
    Figure. 1
  4. Determine the transfer function C/R from the system shown in Fig. 2, using block diagram reduction technique.
    SYSTEM ENGINEERING
    Figure . 2
  5. Represent the following set of equation by a signal flow graph and determine the overall gain relating x and x using Mason's gain formula.
    x = ax1 + fx2          x = bx2 + ex4
    x = cx3 + hx5         x = dx4 + gx2
  6. For the following mechanical system shown in Fig. 3.
    (a) Draw free body diagram
    (b) Write the system dynamic equations
    (c) Draw electrical analogous circuit
    SYSTEM ENGINEERING
    Figure.3

Thursday, 27 June 2013

OPTICAL FIBER COMMUNICATION (utu question papers)

OPTICAL FIBER COMMUNICATION SYSTEM
SEM-VII, 2012-13
B.TECH EXAMINATION
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 3 Hours
Total Marks:100
Attempt any four parts:
  1. Discuss Dispersion mechanism with respect to single mode fiber indicating the dominating effects and then show how inter-modal dispersion may be minimize within the single mode region.
  2. Briefly discuss with the aid of a suitable diagram what is meant by the acceptance angle for an optical fiber. Show how this is related to the fiber numerical aperture and the refractive indexes for the fiber core and cladding?
  3. A step index with a large core diameter compared with the wavelength of the transmitted light has an acceptance angle in air of 22 degree and a relative refractive index difference of 3%. Estimate the numerical aperture and the critical angle at the core-cladding interface of the fiber.
  4. What are the modes in optical fiber? Calculate number of modes for a graded index optical fiber if core diameter (d = 62.5 μ m), NA =0.275 and Operating wavelength = 1300 nm.
  5. Two polarization maintaining fibers operating at the wavelength of 1.3 micrometer have beat length of 0.7 mm and 0.8 mm. Determine the briefringence in each case and comment the result.
  6. Derive an expression for the acceptance angle for skew rays which changes direction by an angle of 2γ at each reflection in step index fiber in terms of NA and γ.

SWITCH GEAR AND PROTECTION (utu previous question papers)

SWITCH GEAR AND PROTECTION
SEM-VII, 2012-13
B.TECH EXAMINATION
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 3 Hours
Total Marks: 100
Note: Attempt all the questions.

Attempt any four parts of the followings:
  1. Explain role of protection in a power system. What are the fundamental requirements of protective relaying?
  2. Discuss the role of back up protection. What is the various method of giving back up protection?
  3. Discuss briefly the following:
    (a) Pick up
    (b) Selectivity
    (c) Stability
    (d) Flag indicator
    (e) Burden of relay
  4. What do you mean by PSM and TMS? Explain how these factors are affecting the relay operation?
  5. Explain the working principle of induction type electromagnetic relay.
  6. What is Buchholz relay? Which equipment is protected by it? For what type of fault is it employed? With neat diagram discuss its working principle.

Wednesday, 26 June 2013

DESIGN ANALYSIS OF ALGORITHMS B. TECH SEM V (2012 -13) (utu previous year question paper)

DESIGN ANALYSIS OF ALGORITHMS B. TECH

 SEM V (2012 -13)

UTTARKHAND TECHNICAL UNIVERSITY


Time : 3 Hours 
Total Marks : 100
SECTION - 1

Attempt any four

  1. Is         =O(2n) ? Is 2     O(2 ) ?
  2. Arrange the following in order of best to worst efficiency : O(n log n ), O(n ), O(n ), O(n log   ).
  3. Give an analysis of worst case running time of quicksort . When does it occur ?
  4. Give an array of 8 element which is the worst case for Insertion Sort .
  5. Define the asymptotic notations used for best case average case and worst case analysis of algorithms.
  6. Show that the solution T(n) = T(           ) + 1 is O( lg n ) .
 SECTION - 2
Attempt any two 

  1. (A) Insert the following values one at a time into an initially empty red-black tree 41, 38, 31, 12, 19, 8 (B) Show that, for arbitrarily large values of n , there are red - black tree with n nodes that have height 2 logn - O(1) .
  2. Suppose that a node x is inserted into a red-black tree with RB-INSERT and then immediately deleted with RB-DELETED . Is the resulting red-black tree the same as the initial red -black tree ?
  3. Insert the following nodes into an empty AVL tree . Show each step and what rotations are needed . Nodes to insert : 10, 40, 35, 25, 60, 30, 80, 50, 27, 28, 38

SECTION - 3 

Attempt any two    
 
  1. (A) What is the difference between a pure recursive solution and a dynamic programming solution to a problem ?                                                                                                                                      (B) What do we understand by the "optimal substructure property" in a dynamic programming problem? 
  2. Explain N-queens problem with an algorithm. Explain why backtracking is defined as a default procedure of last resort for solving problems .
  3. (A) State if backtracking always produces optimal solution.                                                            (B) Describe how to implement a queue using two stacks and O(1) additional memory , so that the amortized time for any enqueue or dequeue operation is O(1) . The only access you have to the stacks is through the standard subroutines PUSH and POP .
SECTION - 4
Attempt any two 
  1. Solve the following instance of the single - source shortage paths problem with vertex "v3" as the source .
  2. Draw a (simple) directed weighted graph G with 10 vertices and 18 edges ,such that G contains a minimum-weight cycle with at least 4 edges . Show that the Bellman - Ford algorithm will find this cycle .
  3. Show how to modify Dijkstra's algorithm for the case when the graph is directed and we want to compute shortage directed paths from the source vertex to all the other vertices . 
SECTION - 5
Attempt any two 
  1. (A) How do we establish that a problem is NP-Complete ?                                                            (B)  Given a graph G and vertices s and t, does G contain a walk from s to t such each vertex of G is visited at a once and at most 100 times .
  2. What happens when we use the Goemans-Williamson algorithm for MAX-CUT an a triangle ? Square ? Pentagon? Specifically , what can be inferred on the algorithm's ratio and on the integrality ratio of the relaxation ?
  3. Show that the Next-Fit algorithm for BP (BIN-PACKING) achieves an asymptotic ratio of 2. Show that FF(1) < NF(1) .

.................................

DIGITAL SIGNAL PROCESSING

DIGITAL SIGNAL PROCESSING
SEM-V,2012-13
B.TECH EXAMINATION
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 3 Hours 
Total Marks: 100
SECTION - A

Attempt any four parts of the following:
  1. If two discrete - time LTI systems are cascaded, then prove or disprove that interchanging their order does not change the total system.
  2. Test the following systems are stable or not:
    (i) y(n) = cos[x(n)]
    (ii) UTTARAKHAND TECHNICAL UNIVERSITY (UTU)
  3. Derive the condition for impulse response of causality and stability properties in LTI systems.
  4. Differentiate between DTFT and DFT.
  5. Differentiate between FFT and DCT.
  6. Discuss about the application of adaptive filtering in echo cancellation.

ANTENNA AND WAVE PROPAGATIONS

ANTENNA AND WAVE PROPAGATIONS
SEM-V, 2012-13
B.TECH EXAMINATION
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 3 Hours
Total Marks: 100
Attempt any four of the following:
  1. Define Gain and Beam width of an antenna.
  2. Explain the term " Antenna Impedance" and” Radiation resistance".
  3. An antenna has a radiation resistance of 72 Ohms, a loss resistance of 8 Ohms and a power gain of 12 dB. Determine the antenna efficiency and its directivity.
  4. Write in brief the working of Yagi Antenna.
  5. Discuss the term " Linear Polarization" and "Elliptical polarization"
  6. Determine the electric field at a point "p" due to doublet of length "dl". Obtain the expression for radiation resistance (Rr) of such doublet.

Tuesday, 25 June 2013

ANN AND FUZZY LOGIC

ANN AND FUZZY LOGIC
SEM-VII, 2012-13
B.TECH EXAMINATION
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 3 hours
Total Marks: 100
Note: Attempt all questions.

Answer any four:
  1. What is a biological neuron? Given its structure and explain its functioning.
  2. Explain McCulloh Pitts model of artificial neuron.
  3. Using artificial neuron model with 'Threshold' function show its use as 'OR' and 'AND' gates.
  4. Differentiate between a single layer perception and a multi layer perception.
  5. Discuss log sigmoid and tan sigmoid activation functions.
  6. Draw an MLP of [5, 3, 2] structure and mark the directions of signal and error flow.
Answer any four:
  1. Draw any four types of membership functions and give their mathematical expressions.
  2. How is a fuzzy set represented? Define support, height and compliment of a fuzzy set.
  3. If A = [a1, a2] and B = [b1, b2] are two fuzzy sets, what will be the resulting sets after performing addition, subtraction, multiplication and division operations on the sets?
  4. Describe briefly Mamdani's inference system.
  5. What do you understand by 'Cartesian product' of two fuzzy sets? If A = {0.2/x1, 0.5/x2, 1/x3} and B = {0.3/y1, 0.9/y2} find the Cartesian product between A and B.
  6. What is Defuzzification? Give various methods of defuzzification.

COMPUTER BASED NUMERICAL TECHNIQUE (CBNST)

COMPUTER BASED NUMERICAL TECHNIQUE (CBNST)
SEM-III,2010-11
B.TECH EXAMINATION
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 2 hours
Total Marks: 75
Attempt any three parts of the following:
  1. If X = 2.536, find the absolute error and relative error when
    (i) X is rounded and
    (ii) X is truncated to two decimal digits.
  2. Find a real root of cos x = 3x - 1, correct to three decimal places by iteration method.
  3. Using Regula-Falsi method, compute the smallest positive root of the equation ex - 2 = 0, correct upto four decimal places.
  4. Find the root of the equation x3 - x -1 = 0 by using Muller's methods.

Monday, 24 June 2013

POWER SYSTEM ANALYSIS (utu previous year question papers)

POWER SYSTEM ANALYSIS
SEM-VI, 2012
B.TECH EXAMINATION
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time :3 hours
Total Marks:100
Note: Attempt all questions

Attempt any four parts out of the following
  1. Why do we prefer to analyze unsymmetrical faults by symmetrical component methods?
  2. A single phase two-winding transformer is rated 20 kVA, 480/120 V, 60 Hz. The equivalent leakage impedance of the transformer referred to the 120V winding 2, is Zeq2 = 0.0525  78.13oΩ. Using transformer ratings as base values determine the per unit leakage impedance referred to winding 2 and referred to winding 1.
  3. Bus voltages at Bus-1 and Bus-2 in a two-bus system with a purely reactive transmission line between Bus-1 and Bus-2 are 1.00 0o and 1.05 -10o ,respectively. In what directions real and reactive powers will flow? Explain why?
  4. Transmission line between Bus-1 and Bus-2 of a two bus system has a serial impedance of R + JX and shunt admittance of jY. Find the Bus Admittance Matrix.
  5. What is the need of a reference buses are there in an interconnected system?