FUNDAMENTAL OF ELECTRONICS ENGINEERING (utu previous year question papers)

FUNDAMENTAL OF ELECTRONICS ENGINEERING
SEM-II, 2013
B TECH QUESTION PAPER
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 3 Hours

Total Marks: 100

Attempt any four parts of the following:

1. Define Semiconductor materials on the basis of energy band diagram with example.
2. How electron hole pairs are generated. Explain working of different forms of semiconductors.
3. Why Si is preferred over Ge for manufacturing of electronics devices. How Semiconductors diode behave as switch.
4. Explain the effect of temperature on I-V characteristics of p-n junction diode.
5. Differentiate between extrinsic and intrinsic semiconductor on the basis of impurity present in them.
6. Explain the working of Semiconductor diode at different biasing conditions, no bias, forward bias & reverse bias condition.

Attempt any four parts of the following:

1. Explain full wave bridge rectifier.
2. Prove that efficiency of full wave rectifier is 81%.
3. The reverse saturation current of a silicon diode in 3 nA at 27^o C find-
   (i) Reverse saturation current at 82^o C.
   (ii) Forward current at 82^o C if forward voltage applied is 82^o C.
4. Sketch V_o for the circuit shown below D₁ and D₂ are silicon diodes.
   
5. Determine V_o for network given below.
   
6. Explain Voltage Doublers or Voltage Tripler with neat diagram.

Attempt any two parts of the following:

1. (i) Explain Zener diode, draw its symbol and V-I characteristics.
   (ii) In a Zener voltage Regulator find the range of R_L and I_L for Load voltage to be constant.
   
2. Draw a Voltage Regulation that will maintain an output voltage of 20V across a 1KΩ load with an input that will vary between 30 and 50 V. That is determining the proper value of series Resistance (Rs) and maximum current I_ZM.
3. Explain Zener Diode application as shunt regulator.

Attempt any two parts of the following:

1. (i) Derive relation between α & β of transistor, also calculate β for given α= 0.95.
   (ii) Explain potential divider biasing of transistor.
2. (i) Explain working of npn transistor at no bias and active mode condition.
   (ii) What is close loop non inverting amplifier, derive expression for it.
3. (i) The BJT amplifier has h_fe = 100, V_BE = 0.007 V, I_CO = 0. Calculate the value of R₁ and R_C. Such that I_C =1 mA and V_CE = 2.5V.
   
   (ii) For the following, as shown in the following, determine the output voltage v_o if the input voltage v_i = 1.2 V.
   

Attempt any two parts of the following:

1. (i) Write down characteristics of ideal OP-AMP.
   (ii) What is close loop non inverting amplifier, derive expression for it.
2. (i) Convert the following numbers:
   (a) (4021.25)₁₀ = ( )₂
   (b) (101010.10)₄ = ( )₈
   (c) (23.AB)₁₆ = ( )₂
   (d) (111011)₂ = ( )_{gray code}
   (v) (23.53)₁₀ + (23.58)₈ = ( )₁₀
   (ii) Minimize the following Boolean function and draw its logic diagram using minimum universal gates.
   
3. Explain the construction and working of n-channel enhancement type MOSEFET. Also draw its drain and transfer characteristics of the same.

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