Territorial Army Bharti All Zones T A Rally Vacancies 2016

indian army released territorial army (T A) recruitment schedule to organize ralies in various inf/eco units for recruitment of soldier GD soldier CLERK and soldier tradesman categories .



ALL INDIA UNIT WISE TA BHARTI SCHEDULE RECRUITING ZONES (ZONE 1ST, 2ND, 3RD& 4TH)

TA upcoming recruitment all india bharti 2016
age limit -18 to 42 yrs
education qualification
sol GD --10th pass with 45%
no percentage limit in case candidate have higher education 12th pass or any
CLERK--12th with 50%
TRADEMAN --8th pass /10th/12th

zone 1st haryana, himachal pradesh, jammu & kashmir, punjab and the union territory of delhi and chandigarh

date coming soon

recruitment zone 2nd --Bihar, madhya pradesh, orissa, uttar pardesh, jharkhand, chattisgarh and UTTRAKHAND
NO OF VACANCIES -59
DATE OF RECRUITMENT - 6 MARCH TO 12 MARCH 2016
LOCATION/VENUE--DEHRADUN (uttrakhand)

153 infantory (TA) dogra
no of vancy and location coming soon

114 infantory (TA) jat
no of vacancy and location coming soon


ZONE 3rd-- assam, meghalaya, manipur, tripura, nagaland, sikkim, west bengal, mizoram, arunachal pradesh and ut of andman & nicobar

date and location coming soon


 ZONE 4th -- andhra pradesh, gujrat, kerela, tamil, rajasthan, maharastra, karnataka, goa, and ut of dadra and nagar haveli, daman & diu, lakshadweep and pondichery
115 infantry (TA) mahar
no of vacancy--14
tradesman --5
date -- 18 feb to 26 feb 2016
location/venue--fort belgaum

117 infantory TA the guards
vacancy -18
trademan -2
date 3 march- 6 march 2016
location - unit loc tiruchirappalli (tamil nadu)

110 infantry TA madras
vacancy 47
3mar-6mar 2016
loc-- prs ground coimbatore, tamil nadu

122 infantry TA madras
vacncy- 50
10 mar-14 mar 2016
loc-- kanpur, kerela

125 infantry TA the guards
vac--40
date-- 18 mrch to 22 march 2016
loc-- unit loc tiruchirappalli (tamil nadu)

116 infantry TA para
vac- 28
date 26 mar- 31 mar 2016
loc- devlali

154 infantry TA bihar
coming soon

importan informatin plz bookmark our website

RPF Recruitment 2016, 2030 Women Constable Posts, rpfonlinereg.in (Apply Online)

RPF Recruitment 2016 notification and upcoming job opening online application form for 2030 Women (Female) Constable posts in available at rpfonlinereg.in.
RPF Constable Recruitment 2016: Railway Protection Force has issued most awaited employment notification for selection of eligible staff for Female (Lady) Constable posts on its official site www.rpfonlinereg.in. Now all qualified candidates are invited to fill online application form for 2030 vacancies whose link is made available at above mentioned portal.
Let us know something about Railway Protection Force which is commonly known as RPF. It is one type of security force of India specially for Indian Railway. The main duty of force is to protect railway passenger, passenger area and railway property from bad elements. Currently is has more than 65000 strength and completely headed by Director General.
Recently Railway Protection Force has released big advertisement as RPF Women Constable Vacancy 2016 in Indian railway employment news or rojgar samachar. This job notification brings great news for all those aspirant who were looking for latest central government jobs and specially railway jobs. By grabbing RPF Constable vacancies, selected aspirant will able to make their future secure and bright.
Now all interested candidates have to fill Railway RPF online application with all correct and required details. After filling form, aspirant must submit it before due date of accepting as mentioned in notification. Before filling form, aspirant are advised to refer following mentioned details such as academic qualification, age limit, salary offered etc.
RPF Recruitment 2016 Job Details:
Name of the department: Railway Protection Force

Name of the posts: Female Constable posts

Number of the post: 2030 vacancies (RPF= 1827 and in RPSF= 203)

Category wise post details:

-General RPF: 804
-General RPSF: 95
-OBC RPF: 614
-OBC RPSF: 52
-ST RPF: 145
-ST RPSF: 33
-SC RPF: 264
-SC RPSF: 23

Job location: India

Category: RPF Railway Jobs

Eligibility Criteria for RPF Female Constable Jobs 2016:

Application Fee:

--Candidates are advised to refer official advertisement for detail information.
Education Qualification:
Interested candidates must have completed their intermediate (12th class) from recognized board.
--For more detail refer advt.
Age Limitation:

--Age of interested candidates must be minimum 18 years and maximum 25 years.
--Relaxation in age will be applicable as per rules of central government.
Check: RPF Syllabus 2016

Pay Scale:

--Selected number of candidates will be eligible to grab salary of Rs. 5,200/– To Rs. 20,200/- along with Grade Pay of Rs. 2000/-.
--Salary will be different as per post wise.

Selection Procedure:

--Applied number of candidates have to go through three stage i.e. written examination, physical eligibility test and personal interview for grabbing this job opportunity.

How To Apply for Railway Protection Force Recruitment 2016?

-Go to official website.
-On Home Page, click on Latest Career tab.
-Now click on Advertisement of Constable Posts link.
-Read all mentioned details in pdf opened file.
-Now candidates need to click on online application form link.
-Fill up form with all correct and required details.
-Upload scanned copy of photograph, signature and required documents.
-Verify filled form and submit it before due date of accepting.
-At last take print out of filled form for further reference.

Important Date to Remember:

-Starting date for apply online application form: 30th January, 2016
-Last date for submit online application form: 01st March, 2016

Biomedical Instrumentation (UTTARAKHAND TECHNICAL UNIVERSITY B.Tech Electrical & Electronics Engineering)

UTTARAKHAND TECHNICAL UNIVERSITYB.Tech Electrical & Electronics Engineering(8th Semester) Examination 2015Biomedical Instrumentation

Time: 3.00  Hrs]                                                                                                           [Max. Marks: 100 
Note: All questions are compulsory.
1. Attempt any four                                                                                                       4*5=20

1. What is patient care monitoring? Explain its component in brief. What are the problems  associated with it?
2. Explain the Holter Monitor in brief and list some difference between ICU and CCU.
3. Give a brief classification of instruments for diagnosis of X-rays & explain anuone of them.
4. Explain action and resting potential with complete waveform.
5. What are the different methods adopted for accident prevent during chemical test in Biomedical Instrumentation.
6. What do you understand from Ultrasonic measurement?

2. Attempt any four                                                                                                        4*5=20

1. Explain the following in context with biomedical Instrumentation- 

• Galvanic skin response 
• Invitro and in vivo measurement 
• EMG
• Plethysmography
• Cardiac stress test
• ECG recording  

VLSI Technology (utu previous year question papers)

VLSI TECHNOLOGYSEM-VI, 2014B.TECH EXAMINATIONUTTARAKHAND TECHNICAL UNIVERSITY (UTU)

Time: 3hours

Total marks: 100

Q1. Attempt any Four:

A.      Describe and discuss various features of ICs with respect to discrete integral circuits.

B.      What are the various steps involved in the manufacturing of monolithic IC.

C.      Why oxidation is done? Explain the chemistry of oxidation and kinetics of oxide growth.

D.      A silicon wafer with p type doping of 10¹⁵ is heated at 1000⁰ C for 1 hour in day oxygen. How much oxide has been grown?

E.       Describe a CZ furnace. What are its advantages?

F.       All modern silicon MOSFET’s are fabricated on <100> oriented Si substrate. Why?

Q2. Attempt any four:

A.      What are the process variables which affect the diffusion process? Explain.

B.      What is optical growth? What is the advantage of epitaxial process over diffusion and Czo kralski process?

C.      What is Fick’s Law? Explain it’s important in theory of diffusion.

D.      What is the MBE system? Explain with diagram.

E.       Write short note on

                            i.          Photo mask and photo resist.

                           ii.          Photo lithography techniques.

                                F.       Does the thickness of the epitaxial wafer pose a problem in epitaxial processing from a stress view point? Discuss your answer.

sub - Switchgear and protection Utu previous year question papers

B.tech Examination papers dec 2014
sub - Switchgear and protection
Utu previous year question papers
uttarakhand technical university previous question papers

Time : 3 hrs
Q1: Attempt any four :

1. Explain static relay and write its merits and demerits.
2. Explain electromagnetic impedance relay.
3. What are the various types of over current relays? Discuss their are of applications.
4. Explain Directional Over-current relay?
5. The current rating of a relay is 5A. PSM=2, TSM=0.3, CT ratio=400/5, fault current= 4000A. Determine the operating time of the relay. At TMS= 1, operating time various PSM are:
   PSM=                                2         4        5        8        10        20
   operating time in seconds=  10       5        4        3       2.8        2.4

Utilization of Electrical Energy and Traction. UTU (uttrakhand technical university previous year question papers)

B.tech question papers
sub- Utilization of Electrical Energy and Traction.
UTU (uttrakhand technical university
previous year question papers)
Dec 2014

Q1: Attempt any four:

1. What are the advantages of induction heating? Give classification of various heating methods.
2. What is Ajax-Wyatt Furnace? Describe construction, principle of operation and application of this furnace.
3. Discuss advantages of electrically produced heat. State the properties of a heating element used for this heating.
4. Explain with help of neat sketch the working of Ajax Wyatt furnace.
5. A 40KW 3 phase 400v, resistance oven is to employ nichrome strip 0.25mm thick for the three star-connected heating elements. If the wire temperature is to be 1200C and that of the charge is to be 800C, estimate a suitable width for the strip. Assume emissivity= 0.9 and radiating efficiency=0.5. Also determine the temperature of the wire when the charge is cold.
6. What are the factors which limit the choice of frequency in induction and dielectric heating?

one more step4success (optimistnet.com)

What is Optimistnet ?

The World we live in is Full of negativity

Your best friends might put you down

Most people will tell you that you will never make it

You open the news and get exposed to so many negative messages

You walk in the streets see angry and sad faces.

All of these negative messages pass directly to your brain and shape your beliefs then in the end you start wondering why are you sad, pessimistic or even depressed.

The only way to prevent your mood from being ruined is to balance this negativity by getting exposed to some positivity as well. This is why we created www.optimistnet.com

The first social network that has nothing but motivating, positive and uplifting content, Join optimistnet today and get your daily dose of uplifting positive messages.

If you really want to become successful and want to achieve what you believe in, then you should follow those positive and optimist people who will help you. 

Bhagwant Singh (me) personally use this network to remain positive. Don't let negative, arrogant and narcissist people affect your dreams. Good luck.!:)

utu previous year question papers uttarakhand technical university b.tech 4th sem (2013-2014) sub: microprocessor and its applications

utu previous year question papers
uttarakhand technical university
b.tech 4th sem (2013-2014)
sub: microprocessor and its applications 

Q1: Attempt any four parts:

1. Give a short note on evolution of microprocessor.
2. Draw the basic block diagram of microprocessor and explain the function of each block in brief. 
3. Explain all types of semiconductor memories in brief.
4. Discuss the organization of semiconductor memory and advantages and disadvantages of SRAM over DRAM.
5. Explain the sequential and parallel types of memory with the help of suitable example.
6. Draw and explain the timing and control unit.

Q2 Attempt any four parts:

1. Draw the basic arhtiecture of 8085 microprocessor.
2. Explain the pin diagram of 8085 microprocessor.
3. Explain the various addressing modes of 8085 microprocessor.
4. Explain the following instruction of 8085 microprocessor.
   a) ADI data
   b) LXI B, 02H
   c) DCRC
   d) RLC
5. Write and assembly language program for te addition of two decimal numbers using 8085 microprocessor.
6. Draw the timing diagram of memory read cycle in 8085 microprocessor.

utu previous year question paper sub : POM (Principles of Management)

Uttrakhand Technical University
sem: 6th
utu previous year question paper
2013-2014
sub : POM (Principles of Management)

Q1: Attempt any two.

1. List any five major function performed by the management?
2. What is need of hierarchy theory of managment?
3. Compare and contrast the works the works of F.W.Taylor in the area of scientific management?

Q2: Attempt any two.

1. discuss various theories of management.
2. Difference between co-ordination and monitoring.
3. What do you mean Managerial decision making and MIS?

Q3: Attempt any two.

1. How can an employee interact with internal and external environment?
2. What guideline s would you suggest to ensure effective organization? Also explain the process of organizing?
3. What are the steps in controlling? Explain with suitable examples.

Q4: Attempt any two.

1. What are challenges of motivation in the new workplace?
2. What are the steps in organizational structure?

                                         ..........xxxxxx............

What are step4success?

What are step4success?

1. Goal Setting: - set your goal is the first step4success if you don’t have any goal find one.
2. Time management:- now write the goal on a diary and make a schedule for it.
3. Take action: - now stop thinking about it much and start taking actions….go take action just start it dude.
   (Learn missing skills, find new ideas, practice, and apply learned skills practically.)
4. Persistence: Most people just complete the above 2 steps but then they give up too soon. This is horrible mistake. Only persistence will lead you toward success.
5. Failure (optional):- if your plan or schedule fail just be flexible make a new one and start form the step one (goal setting) again. Remember break downs and rejections are a part of success ladder.
6. Finally:  you get what you want. Congratulations and enjoy this proud feeling.

Extra tip: obstacle will come on your way to put you down, just believe in yourself and follow these steps.

Q:- But why most people doesn't get what they want? 

Answer: they doesn't take action, or they give up too soon, they listen to those experts who put them down, they doesn't have any role model, they doesn't like to feel bad emotions of rejection or failure, they doesn't want get out of their comfort zone, make excuses, they blame their luck instead of finding the missing skills and try to start again, they have negative beliefs about success etc.

start now.! i am sure you can.

written by: Bhagwant Singh

APPLIED ELECTRONIC & INSTRUMENTATION

UTU PREVIOUS YEAR QUESTION PAPERS
SUB: APPLIED ELECTRONIC & INSTRUMENTATION
SEM-V (2013-14)

Attempt any Four parts:

1. Define the word transducer? Also classify them?
2. State the 5 static characteristics of Transducer?
3. Explain the working of LVDT in addition with c type Bourdon tube with proper diagram?
4. For what purposes Strain gauge is used ? Explain semiconductor types & gauges?
5. What do you understand by temperature compensation? how temperature compensation is done using Wheatstone bridge circuit using 2 active elements?

 Attempt any Two parts:

1. With the help of appropriate diagram explain the working of resistance temperature detector? Also state the difference between Thermistor & amp; Resistance temperature decoder?
2. Give the basic idea about elastic pressure Elements? How pressure measurement is done Bellows?
3. A Thermistor has a resistance of 10 kilo ohm at 25 degree Celsius. The resistance temperature coefficient is -0.05/ degree Celsius. A Wien’s Bridge Oscillator uses 2 identical Thermistors in the Frequency determining part of the bridge .The value of capacitance used in the Bridge is 500pf .Calculate the value of frequency of oscillations for .
   (a) 20 degree Celsius 
   (b) 25 degree Celsius
   (c) 30 degree Celsius

 Attempt any Two parts:

1. Define Vibration and Shock? Also describe the need and importance of Vibration measurement including the diff between Vibrometer and Accelerometer?
2. Describe the construction of a Seismic type vibration Transducer ? Derive the steady state o/p of the Transducer when a Sinusoidal i/p is applied to it ?
3. Describe Tachometer? What r Electromagnetic and Photoelectric type Tachometer?

Attempt any Two parts:

1. What do u understands by Telemetry System / Also explain Radio Telemetry.
2. What is SNR ? Why there is need to improve it ? And how improvement of SNR is done.
3. Difference between Grounding and Shielding with the help of proper diagram ?

Attempt any Two parts:

1. With the help of block diagram explain DC as well as AC electronic voltmeter?
2. What are current probes? Give the basic principal of operation of AC and DC current probes?
3. Explain ramp and dual slope integration type digital voltmeter?

_______________________

VLSI Technology (utu previous year question paper)

utu previous year question paper

sub:- VLSI Technology 

b.tech sem 5th

Uttarakhand Technical University

Q1:- Attempt any four parts:

1. Describe CZ process in detail with neat diagram. What is the pull Rate in CZ technique? How the Pull rate is controlled during the CZ crystal growth process?
2. A silicon ingot with 0.5 * 10^16 boron atoms/cm^3 is to be grown by CZ method. What should be the concentration of boron in the melt to obtain the required doping concentration? The segregation coefficient of the boron is 0.8
3. Describe the effect of orientation on oxidation? Prove that linear growth rate occur for short time oxidation.
4. Calculate the oxidation time required for the thermal oxidation of 100A thickness at 1000 degree C. NOTE: B= 5.2  105A 2/min. and B/A = 111A/min {A = angstrom }
5. Describe two most common methods used for measuring thermal oxide thickness.

Concept of Programming and OOPS (Utu previous year question paper)

Utu previous year question paper

sub:- Concept of Programming and OOPS

b.tech 2013-14 (sem-5)

uttarakhand technical university

time: 2hrs

max marks: 50

Q1:- Attempt any four of the following:

1. What is editor? Explain the main functions of vi editor.
2. What is looping mechanism? Differentiate between while and do-while loop with a suitable example.
3. Explain UNIX shell and its type in brief.
4. Explain recursive function. Write a C program to find the factorial of a given integer by using recursion.
5. What is array? Write a C program for addition of two arrays
6. Differentiate if and if-else statement by using a C program.

Q2:- Attempt any four of the following:

1. What do you understand by testing and debugging process? write a program in C to check the given number is even or odd.
2. What are the variable and keyword in C language? Explain with proper example.
3. Explain the phases of software development life cycle (SDLC) model. Draw a spiral model of a software development.
4. Describe the various processes involved in user interface design.
5. What is code review? Write an algorithm to check whether the given year is leap or not.
6. "C is known as structured programming language". Why? Justify the statement.

sub: Microprocessor and its application (utu previous year question papers

utu previous year question papers
sub: Microprocessor and its application
sem 4th , B.tech
back paper examination

time : 3 hrs

calculator is not allowed;

Q1: Attempt any four parts:

1. Draw the block diagram of microprocessor and explain it in brief.
2. Explain the physical address formation with the segment and offset words.
3. Discus the improvement of intel 8086 over intel 8085 microprecessor.
4. Describe the function of the 8086 queue. How does the queue speed up processing.
5. Discuss the features of 8085 interrupts. Also explain the SIM and RIM formats.
6. Describe memory segmentation? How can it generate the physical address, explain with example.

Q2: Attempt any four parts:

1. Draw the architecture of 8086 microprocessor and explain it in brief. 
2. Discuss various types of addressing modes of Intel 8085 with suitable examples.
3. Explain the various data transfer techniques.
4. Draw the pin dia of 8085 microprocessor.
5. explain the minimum mode of operation in 8086 microprocessor.
6. Explain the instruction : SHLD 16-bit addr, DAA, STA 16 bit addr.

important question for viva test of workshop

                  Utu previous year question papers.

some most important question for viva test of workshop.

1. What is turning?
2. Write or tell us operation of lathe machine?
3. Write name of 10 parts of lathe machine.
4. What is feed?
5. What is depth of cut?
6. What is the formula of cutting speed of lathe machine?
7. Write the formula of taper angle?
8. How you denote Lathe machine on basis of size?
9. What is function of Lathe machine?
10. Which shape of Job can be made by Lathe Machine?
11. Which dimensions can be measured by Vernier caliper?
12. What is least count?
13. What is the least count of vernier caliper?
14. Which type of material can be processed under lathe machine?
15. What is the least count of micrometer 

SOLID STATE DEVICES AND SEMICONDUCTOR (SSDC)

SOLID STATE DEVICES AND SEMICONDUCTOR (SSDC)
SEM-IV, 2013
UTU PREVIOUS YEAR QUESTION PAPERS

TIME: 2 hour

Max. Marks: 50

Note: Attempt all the questions. Assume suitable data if necessary.

 Attempt any four parts of the following:

1. Explain briefly about the Zener diode as shunt regulator.
2. Describe about the superconductor materials.
3. A LED materials energy gap equals 2.5 eV. What wavelength will it radiate?
4. Write a short note on Insulated Gate Bipolar Transistor (IGBT).
5. Write the merits and demerits of Gunn diode.
6. Name and explain the three conditions for lasing action.

ANALOG INTEGRATED CIRCUIT (AIC)

ANALOG INTEGRATED CIRCUIT
(AIC)
SEM-IV, 2013
B TECH EXAMINATION
utu previous year question paper

TIME: 3 hour

Max. Marks: 100

Note: Attempt all the questions. Assume suitable data if necessary.

Attempt any four parts of the following:

1. Explain Slew rate and its effect on operation of Op-amp.
2. Draw and explain the circuit to generate triangular wave using op-amp.
3. Explain source follower circuit. Discuss its input impedance in detail.
4. Explain the common source amplifier and find the expression for gain.
5. Explain about the crossover and harmonic distortion.
6. Draw and explain cascade current mirror circuit.

Electronic device and circuits (utu question paper)

ELECTRONIC DEVICE AND CIRCUIT
SEM-III, 2011-12
UTU PREVIOUS YEAR QUESTION PAPERS

time : 3hr] 

Total marks :100

SECTION A

Q1:- Attempt any four of the following :

1. Distinguish between
   (i) intrinsic semiconductor and extrinsic semiconductor
   (ii) energy level and energy band
2. A silicon p-n junction employs the following doping levels : N_A = 1 x 10⁶ cm^-3 and  N_D = 5 x 10¹⁵ cm^-3 . Determine the hole and electron concentration on the two sides.
    [ For silicon, n_i  = 1.08 x 10¹⁰   cm^-3]
3. Due to manufacturing error, the p-side of a pn junction has not been doped. If    N_D = 3 x 10¹⁶ cm^-3, calculate the built in potential at T = 300 K.
4. In the junction shown in fig 1, the depletion region has a width of b on the n side and a on the p side. Sketch the electric field as a function of x.

   

   FIG.1

5. Find the resistivity of intrinsic Si at 300 K.
   
   ( μ_n = 1350 cm² /V –s and μ_p = 480 cm² /v –s ) and (n₁  = 1.5 x 10¹⁰   cm^-3).
6. Discuss the role of Ebers Moll and Hybrid- pi model used for BJT.

COMPUTER GRAPHIC

COMPUTER GRAPHIC

SEM-V, 2012
UTU PREVIOUS YEAR QUESTION PAPERS

Time :3 hrs

Total marks :100

Attempt any two of the following:

1. List and explain some applications for large screen displays.
2. Define the following terms:(i) Primitive devices(ii) Display file structure(iii) Display control text
3. Set up a parallel version of Bresenham's algorithm for straight lines of any slope.

Attempt any two of the following: 

1. Discuss various methods of storing the edge list and their relative merits for pattern filling.
2. Explain the following:(i) Segments(ii) Segment table(iii) Creating, deleting and renaming segments.

FUNDAMENTAL OF ELECTRONICS

FUNDAMENTAL OF ELECTRONICS ENGINEERING
SEM-I, 2011
UTU PREVIOUS YEAR QUESTION PAPERS

Time: 3 hours

Total marks: 100

Attempt any four parts:

1. What happens to the conductivity of semiconductors with the rise in temperature? Compare with the conductivity of metals.
2. What is meant by Fermi level in semiconductor?
3. At room temperature, the reverse saturation current is 0.3µA when a reverse bias is applied to a Ge diode. Find the value of current flowing in diode when 0.15V forward bias is applied.
4. Define conductivity. Derive the expression of conductivity in intrinsic and extrinsic semiconductors.
5. Explain the formation of depletion layer in a p-n junction diode.
6. Explain the transition capacitance and diffusion capacitance of a p-n junction diode.