FUNDAMENTAL OF ELECTRONICS

FUNDAMENTAL OF ELECTRONICS ENGINEERING
SEM-I, 2011
UTU PREVIOUS YEAR QUESTION PAPERS

Time: 3 hours

Total marks: 100

Attempt any four parts:

1. What happens to the conductivity of semiconductors with the rise in temperature? Compare with the conductivity of metals.
2. What is meant by Fermi level in semiconductor?
3. At room temperature, the reverse saturation current is 0.3µA when a reverse bias is applied to a Ge diode. Find the value of current flowing in diode when 0.15V forward bias is applied.
4. Define conductivity. Derive the expression of conductivity in intrinsic and extrinsic semiconductors.
5. Explain the formation of depletion layer in a p-n junction diode.
6. Explain the transition capacitance and diffusion capacitance of a p-n junction diode.

BASIC ELECTRONICS

BASIC ELECTRONICS
SEM-I, 2010-11
B TECH QUESTION PAPERS
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 3 Hours

Total Marks: 100

Note: Attempt all questions

Attempt any four parts of the following:

1. Draw the simplified energy level diagram of a solid.
2. On the basis of energy band gap theory, explain the formation of valence band. Differentiate among conductors, insulators and semiconductors.
3. Define the term conductivity, intrinsic concentration and energy gap of semiconductors.
4. The mobilities of free electrons and holes in a pure germanium are 0.38 and 0.18 m2/V-s. Find the value of intrinsic conductivity. Assume n =2.5 x 10¹⁹/m³ at room temperature.
5. A sample of silicon is doped with phosphorous to a density of 10²¹/m³ as well as Boron to a density of 5 x 10²⁰/m³. What will be conductivity of the Si sample? The electron mobility in silicon is 0.18 m²/V-s.

ENGINEERING PHYSICS

ENGINEERING PHYSICS
SEM-I, 2013
B TECH QUESTION PAPERS
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

TIME: 3 HOURS

TOTAL MARKS: 100

Attempt any four:

5×4=20

1. What is Galilean Transformation? Derive Galilean transformation equations.
2. The rest mass of an electron is 9.1 ×10^-28gm. What will be its mass if it moving with of speed of light.Also deducts the fraction increase of mass of a particle for velocity 0.1 c.
3. Deduct Einstein mass energy relation equation,considering the variation of mass with velocity.
4. What is black body? State and explain Kirchhoff's law of heat radiations.
5. What is meant by black body radiation? Explain briefly the energy distribution in a black body spectrum with diagram.
6. What is Compton effect? Derive an expression for the frequency of the scattered photon in terms of the frequency of the incident radiation and scattering angle.

FUNDAMENTAL OF ELECTRONICS ENGINEERING (utu previous year question papers)

FUNDAMENTAL OF ELECTRONICS ENGINEERING
SEM-II, 2013
B TECH QUESTION PAPER
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 3 Hours

Total Marks: 100

Attempt any four parts of the following:

1. Define Semiconductor materials on the basis of energy band diagram with example.
2. How electron hole pairs are generated. Explain working of different forms of semiconductors.
3. Why Si is preferred over Ge for manufacturing of electronics devices. How Semiconductors diode behave as switch.
4. Explain the effect of temperature on I-V characteristics of p-n junction diode.
5. Differentiate between extrinsic and intrinsic semiconductor on the basis of impurity present in them.
6. Explain the working of Semiconductor diode at different biasing conditions, no bias, forward bias & reverse bias condition.

MATHEMATICS-I (utu previous year question papers)

MATHEMATICS-I
SEM-I, 2012-13
B.TECH EXAMINATION
UTTARAKHAND TECHNICAL UNIVERSITY
utu previous year question papers

Time: 3 hours

Total marks: 100

Attempt any four parts of the following:

1. Reduce the following matrix to row echelon form and finds its rank:
   
2. Examine whether the following set of vectors is linearly independent and also find the dimension and the basis of the vectors:
   (1, 1, 0, 1), (1, 1, 1, 1), (-1, 1, 1, 1), (1, 0, 0, 1)
3. Check whether the following system is consistent, if it is then find its solution.
   
4. Verify Cayley-Hamilton theorem for the matrix
   
   Also obtain A^-1
5. Find the eigenvalues and corresponding eigenvectors of the given matrix:
   
6. The eigenvectors of a 3x3 matrix A corresponding to the eigenvalues 1, 1, 3 are [1, 0, -1]^T, [0, 1, -1]^T and [1, 1, 0]^T respectively. Find the matrix A.

CHEMISTRY (utu first year question papers)

CHEMISTRY
SEM.II, 2011
B.Tech
UTTARAKHAND TECHNICAL UNIVERSITY
utu previous year question paper first year btech

Time: 3 Hours

Total Marks :100

SECTION A

Attempt any 4 question

1. On the basis of molecular orbital theory explain the paramagnetic nature of O₂ molecule.
2. Explain conductivity in conductors, semiconductors and insulators with the help of band theory.
3. What is a hydrogen bond? Explain why p-nitrophenol is more soluble in water than o-nitrophenol.
4. What is Bragg's Law? How the density of a unit cell can be calculated?
5. Give the mechanism of the following reactions:
   (i) Beckmann Rearrangement
   (ii) Pinacol-pinacolonone rearrangement.
6. What is E-Z system of nomenclature? In what way it is better than cis-trans nomenclature?

Basic mehanical eng. utu previous year question papers b.tech first year.

Basic mehanical eng.

utu previous year question papers

b.tech first year.

Time: 3 hours

Total Marks : 100

Attempt any four questions:

1. Draw stress-strain diagram for Aluminium and explain its important points.
2. What do you understand by thermodynamic equilibrium?
3. Discuss PMM2 with the help of neat sketches?
4. Water boil at a temperature of 100^oC and pressure of 100 kPa. What will be the pressure inside a cooker in case water boil at 123^oC?
5. A mercury manometer shows a gauge pressure of 100 mm of Hg. In case it is replaced by a water manometer, what gauge pressure in mm of water will be shown by it? Take g =10 m/s².
6. A mass of 1.5 kg of air is compressed in a quasi-static process from 1.1 bar to 10 bar according to law Pv^1.25 = constant, where v is 1.2 kg/m³. Find the work involved in compression process.

ENGINEERING PHYSICS (utu previous year question papers)

Engineering physics
B.TECH EXAMINATION
SEM III, 2012-13
UTTARAKHAND TECHNICAL UNIVERSITY(UTU)
utu previous question papers

Time: 3 hours

Total marks: 100

Unit -I

Attempt any four of the following:

1. What do you understand by absolute motion; define inertial and non inertial frames? Explain the Newtonian principle of relativity.
2. Discuss the non existence of aether using Michelson Morley experiment.
3. An event occurs at x=100 m, y =10 m, z=5 m and t =100μ sec in frame S. Find the coordinates of this event in a frame S' which is moving with velocity 2.7 x 10⁸ m/s w.r.t the frame S along the common XX' axis using 1) Galilean transformation 2) Lorentz transformation.
4. State the fundamental postulate of the special theory of realtivity and write down Lorentz's direct and inverse transformation equations. Discuss how these accounts for the phenomenon of length contraction by explaining the concept of proper length.
5. An iron furnace radiates 1.53 x 10⁵ calories per hour through an opening of the cross section 10^-4 sq meter. If the radiation emittance of the furnace is 0.80, calculate the temperature of the furnace. Given σ =1.36 x 10^-8 cal/m²-s-K⁴
6. State Stefan's law of heat radiation. Describe an experiment to determine Stefan's law.

SUB :- MECHANICAL 1ST YEAR

UTTARAKHAND TECH. UNIVERSITY

UTU

B.TECH FIRST YEAR, 2012

SUB :- MECHANICAL

time : 3hr]  

Total marks :100

SECTION A

Q1:- Attempt any four of the following :

1. Define the following terms:
   (i) Quasi-static process
   (ii) Thermodynamic equilibrium
   (iii) Thermal reservoirs
2. Explain the concept of free expansion with zero work transfer.
3. The properties of a closed system change following the relation between pressure and volume as pV = 3.0, where p is in bar and V is in m³. Calculate the work done when the pressure increase from 1.5 bar to 7.5 bar.
4. Define 'internal energy' and prove that it is a property of a system.
5. Explain heat transfer is a path function?

CHEMISTRY 1st year

UTTARAKHAND TECH. UNIVERSITY

UTU

B.TECH FIRST YEAR, 2012

SUB :- cHEMISTRY

time : 3hr] 

Total marks :100

SECTION A

Q1:- Attempt any four of the following :

1. Draw the MO diagram of HF molecule and calculate its bond order.
2. Derive Bragg's equation for diffraction of X-rays by crystal.
3. Write mechanism of :
   (i) Cannizzaro Reaction
   (ii) Beckmann's rearrangement.
4. By using appropriate examples, discuss and illustrate the stereo chemical implications of SN¹ and SN² reaction.
5. (i) Differentiate between Enantiomers  and Diasteromers by using suitable example.(ii) Differentiate  between Nematic and smectic liquid crystal.

SUB :- BASIC ELECTRICAL ENGINEERING 1st year

UTTARAKHAND TECH. UNIVERSITY

utu

B.TECH FIRST YEAR, 2012

SUB :- BASIC ELECTRICAL ENGINEERING

time : 3hr] 

Total marks :100

SECTION A

Q1:- Attempt any four of the following :

1. Define the following
   (i)  Resistance
   (ii) Specific Resistance
   (iii) Potential difference
   (iv) Unilateral Element
   (v)  Ammeter
2. In the circuit shown 100 V dc voltage is applied across terminal A-B, calculate the power dissipated in each resistor and the reading of a voltmeter connected across the 5 ohm resistor.
   

sub (Mathematics-1) b tech 1st year utu

Uttarakhand Technical University

UTU B.tech (first year)

odd sem Examination

2011-12

sub :- Mathematics-1

time : 3hr]

Total marks :100

SECTION A

Q1:- Attempt any four of the following :

4x5=20

1. Reduce the matrix
   to normal form and hence find its rank.
   
2. Show that the vectors :
   X₂  = (1,2,4), X₂ = (2,-1,3), X₃ = (0,1,2), X₄ =(-3,7,2) are linearly dependent. Find the relation between them.
3. Show that the matrix
   is Hermitian and iA is skew Hermitian.
4. Verify Cayley-Hamilton theorem for
   and hence find A^-1.
5. Prove that the eigenvalues of a unitary matrix are of unit modulus.
6. Test the consistency for the following system of equation and if system is consistent solve them:
   x + y + z =6,
   x + y + 3z= 14,
   x + 4y + 7z =30.

SECTION B

Q2:- Attempt any four of the following: 

Fundamental of Electronics Engineering B.Tech UTU PREVIOUS YEAR QUS PAPER 1st YEAR (I SEM)

Uttarakhand Technical University
B.tech (first year)

odd sem Examination

2009-10

sub :- Fundamental of Electronics

Engineering

time : 3hr] 

Total marks :100

SECTION A

Q1:- Attempt any four of the following :

4x5=20

1. What is Fermi Level? How this level is modified when we add
   (a) P-type
   (b) n-type impurity to the intrinsic semiconductor.
2. Calculate the barrier potential at room temperature for p-n junction is silicon, which is doped to a carrier density 10²²  m^-3 of on the p-side and 22²² m^-3 on the n-side. The intrinsic carrier density for silicon is 1.4 × 10¹⁶ m^-3.
3. Explain the following:
   (a) Transition capacitance
   (b) Diffusion capacitance
   (c) Diode resistance
4. Describe the bridge rectifier. How does it differ from F.W. rectifier using two diodes only. What do you understand by PIV?
5. Calculate the ripple factor and conversion efficiency of half wave rectifier.
6. A full wave rectifier delivers 50 W to a load of 200 ohm. If the ripple factor is 1%. Calculate AC ripple voltage across the load.

SECTION B

Q2:- Attempt any four of the following:

Maths 2nd utu previous year question papers

Uttarakhand Tech. University

B.tech (first year)

2012

sub :- Mathematics-II

time:- 3 hr} 

Total Marks:100

Section A

Note:- Attempt all questions. All question carry equal marks.

Q1 Attempt any four parts of the following:-

5x4=20

1. Solve:
   [y²e^xy² + 4x³]dx +[2xye^xy²- 3y²]dy =0
2. Solve:(1+y²)dx =(tan^_1y –x)dy
3. Solve:
   (D²-2D+1)y = xsinx
4. Solve:
   
   dx/dt + 2x -3y = t, dy/dt -3x + 2y =e^2t
5. Solve:
   
   d²y/dx² + cotx dy/dx + 4y cosec²x =0
   by changing the independent variable.
6. Apply the method of variation of parameter to solve:
   d²y/dx² +n²₄ = secnx
   
   Section B
   

FOC Utu b.tech Imp question paper

Uttarakhand Technical University

Even Sem Examination,

2012

Sub:- Fundamentals of Computer

programming

time:- 3hrs}
total marks :- 100]

Q1:- Attempt any four of the following:

1. Explain IEEE standard for representation of a floating point number. Also discuss the concept of biasing and normalization.
2. Draw the block diagram of a digital computer. Explain its various components. Discuss any five peripheral devices.
3. Discuss the architecture of UNIX operation system by drawing suitable diagram. Explain the following UNIX commands :
   chmod, su, kill, Is, Cat.
4. Write the functions of an Operating System. Differentiate between internal and external Dos commands.
5. Compare and contrast mini, mainframe and micro system.
6. Perform the following conversions :
   
   
   (156.45)₁₀ = (?)₂
   (AC2F)₁₆  = (?)₂
   (10110101010.1101)₂ = (?)₂

Q2:- Attempt any four of the following :

1. What do you understand by the term algorithm? Explain by giving example. List the properties of algorithm.
2. What is the significance of using a flow chart? Draw the flow chart for finding whether the given number is prime or not.
3. Explain the different modes in vi editor.
4. Write an algorithm for finding the GCD of two integers. Check the correctness of your algorithm on following data : 64, 160.
5. Discuss the different phases of a compiler. How a compiler is different from an interpreter?
6. "C is often called as middle level language"--comment.

Q3:- Attempt any two of the following :

1. What is storage class in C? Explain its importance. Show the usage of each storage class by making a suitable program in C.
2. Differentiate between call by value and call by reference mechanism. Make a program in C to reverse digits of a number.
3. (a) What is recursion? Write a recursive function for finding the factorial of a given number.
   (b) What is command line argument ? Make a program to show its usage.

Q4:- Attempt any two of the following :

1. What is an array ? How two dimensional array is stored in one dimensional computer memory ? Write a program in C to find the inverse of a given matrix.
2. Devise a program in C which take list of words as input and gives output the number of palindromes in the given list.
3. What is the difference between structure and union ? Declare a structure "empl" having employee name, age and salary as data member. How using this structure write a program in C to input data of 5 employees and find out the average age of employees whose salary is below ten thousand.

Q5:- Attempt any two of the following :

1. (a) How pointer variable is different from other variable ? Discuss pointer arithmetic.
   (b) Explain the merits and demerits of static and dynamic memory allocation techniques.
2. (a) Write a program in C to the use of pointer to function.
   (b) Discuss the usage of calloc and malloc function taking suitable example.
3. What is the process of declaring a file ? What are the different modes in which a file can be opened ? Write a program in C to copy the content of one file into the another file.

Basic Technical Communication, B.tech

Uttarakhand Technical University

B.tech (sem. 2nd) 

2012

Basic Technical Communication

time : 3hr]
total marks : 100 }

Note : Attempt all questions. It has five sections, every section contain 20 marks.

Section A

Q1:- Attempt any two of the following :

1. "Communication is a process of sharing or exchange information between two or more persons." Discuss in detail.
2. What are the barriers to communication? Elaborate briefly each category of barriers.
3. How is language a tool of communication? Discuss the characteristics of language.

Q2:- Attempt any one of the following :

1. Technical writing and general writing.
2. Levels of communication.

Section B

Q3:- Attempt any two of the following :

1. What are the different types of reading skills? Discuss
   OR
   Suggest the one word for the following.
   (a) A person who does not believe in GOD.
   (b) A list of books.
   (c) A hater of mankind.
   (d) Using more words than necessary.
   (e) One who draws mas.
2. What are the techniques used by the technical writers to make a paragraph coherent?
   OR
   Distinguish between Chronological and Linear methods as significant tools of good technical composition. How these are helpful to a professional ?
3. What are the guidelines for good conversation according to Francis Bacon? Discuss in detail.
   OR
   How is Unity of Minds helpful in the progress of country? Discuss.

Q4:- Attempt any one of the following :

1. Paragraph writing.
2. Skimming and scamming.

Section C

Q5:- Attempt any two of the following.

1. Define technical writing, giving the objectives of improving the writing skills.
2. "Whatsoever be the type or form of a sentence, it should be shaped in such a way that it could have its unique impression on the reader. "Discuss.
3. Write a letter to your friend telling about your first day experience at your engineering college.

Q6:- Attempt any one of the following :

1.  Art of condensation
2. Types of sentences.

Section D

Q7:- Attempt any two of the following :

1. Discuss the process of listening and factors that affect listening.
2. "Romance at short notice was her specialty." Do you agree with this statement of Vera's character?
3. What is the main theme of the story After Twenty Years?

Q8:- Attempt any of the following :

1. Types of listening.
2. Character sketch of Wasserkopf.

Section E

Q9:- Attempt any two of the following :

1. What are the objectives of improving the speaking skills? Explain.
2. What is intonation? What are different kinds of tones? Explain briefly.
3. What is meant by accent? Give examples of some of the accentual patterns in the words of two and three syllables.

Q10:- Attempt any one of the following :

1. Organs of speech.
2. Phonetic Transcription.

Basic Electrical Engineering, utu first year b.tech

Uttarakhand Tech. University

B.Tech First year, 2012

sub :- Basic Electrical Engineering

Time :- 3 hrs}

Total marks : 100]

Q1:- Attempt any four parts of the following :

1. he Norton's and Thevenin's theorem. Also discuss about the duality of Norton's and Thevenin's Theorem.
2. Use Nodal Analysis to find out the current in 4Ω. Resistor of Fig.1

   

   fig. 1.

     
3. Apply Norton's theorem to calculate current following through 10Ω. Resistor of Fig.2

   

   fig 2. 
4. Using Delta-Star Transformation Theorem calculate current from the supply voltage 130 V shown in Fig.3.

   

   fig 3.
    

5. Distinguish the difference between following :
   (a) Active and Passive elements
   (b) Ideal voltage and Current source.
6. State and proof the maximum power transfer theorem.

Q2:- Attempt any four parts of the following :

1. Calculate the r.m.s value, the form factor and the peak factor of a periodic voltage having following values for the equal time interval changing suddenly from one value to the next.
   0, 5, 10, 20, 50, 60, 50, 20, 10, 5, 0, -5, -10V etc.
   What would be the r.m.s. value of sine wave having same peak value ?
2. Explain the nature of power factor in two watt-meter method of three phase power when :
   (a) the two readings are equal and positive
   (b) the two readings are equal but opposite in sign and
   (c) one of the watt-meter reads zero
3. A capacitor of 25 mF is connected in series with a variable resistor. The circuit is connected across 50 Hz mains. Find the value of the resistor for a particular condition when the voltage across the capacitor is half the supply voltage.
4. Explain relative permeability. Calculate the mmf required to produce a flux of 0.015 Wb across an air gap 2.5 mm long an effective area of 200 cm².
5. An alternating current of peak value 45 A has the following wave forms in turn :
   (a) Sinusoidal
   (b) Full wave rectified sinusoidal
   (c) Rectangular and
   (d) Triangular
   Show the above wave forms and calculate average and r.m.s. value.
6. An iron ring of mean circumference 1.2m is uniformly wound with 400 turns of wire. When a current of 1.5 Amp is passed through the coil, a flux density of 1.25 Wb/ m² is produced in the iron. Find the relative permeability of iron under these conditions.

Q3:- Attempt any two of the following :

1. Explain the following :
   (a) Defecting Torque
   (b) Controlling Torque
   (c) Damping Torque
   Discuss the principle of operation and construction of PMMC type measuring instrument.
2. A single phase energy meter hours a constant of 1200 rev/kWh, When a load of 200 W is connected the disc rotate at 4.2 rev/min if the load is on for 10 hours, how many units are recorded as an error ? Also find percentage error.
3. Explain how does the input current adjust to meet out the new conditions, when the load current in the transformer increases ?
   Calculate the efficiency at half and full a 100 k VA transformer for p.f. of
   (a) unity
   (b) 0.8 The copper loss is 1000W at full load and iron loss is 1000W.

Q4:- Attempt any two parts of the following :

1. Three impedance each having a resistance of 20Ω and an inductive reactance of 18Ω are connected in star across a 400V, three phase supply. Calculate
   (a) the line current,
   (b) the power factor,
   (c) total power in kW.
2. Explain principle of operation of a DC generator. Also derive the E.M.F equation for DC generator. Also derive the E.M.F equation for DC generator.
3. A shunt generator has a full load current of 196A at 220V. The stray losses are 720 W and the shunt field resistance is 55 Ω . If it has a full load efficiency of 85%, find the armature resistance. Also, find the load current corresponding to maximum efficiency.

Q5:- Attempt any two of the following :

1. Explain the method of starting of 3 phase synchronous motor. Also discuss its application.
2. What do you mean by "slip" ? A three phase, 50 Hz, pole induction motor has a slip of 2% at on load and 4% at full load. Determine
   (a) synchronous speed
   (b) no load speed
   (c) full load speed
   (d) frequency of rotor current at stand still,
   (e) frequency of rotor current at full load.
3. Write short technical note on any two of the following :
   (a) Slip-Torque characteristics of 3 phase induction motor.
   (b) Construction and working of single phase capacitor start induction motor.
   (c) Basic elements of power system with help of single line diagram.

----XXXX----
Best of luck guys :)

sub:- (Electronics) B.tech first year question paper

Uttarakhand Technical University
B.tech (first year)

odd sem Examination, 2012,

sub :- Fundamental of Electronics

Engineering

time :- 3 hrs}

[Total Marks :100 ]

Note : Use of calculator is permitted. 

                                                              Section A

Q1:- Answer any 4 parts of the following :

 4*5=20

1. Explain intrinsic and extrinsic semiconductors by stating at least two examples of each.
2. Explain the basic concept of forbidden gap in semi conductors and discuss the effect of temperature on it.
3. Describe the formation of a p-n junction . Explain the depletion region and potential barrier.
4. Explain what do you understand by clipping circuit. Describe the working of the positive clipper.
5. Show that I_{E =}I_{B +} αI_{E +} I_{CBO .}   In what way  I_CBO  depend on temperature.
6. Explain the binary numbers . Taking 125.525 as an example, describe decimal to binary conversion.

Q2:- Attempt any four parts of the following :

4*5=20

1. Explain with the help of suitable diagram, how free electrons and holes contribute towards the electric current in a semiconductor.
2. Describe how n-type and p-type semi conductors are produced. State the main difference between them.
3. What do you understand by dc and ac resistance of a crystal diode. How will you find them using V-I characteristic.
4. Describe the various rating of Zener diode supplied by manufactures.
5. Calculate ac drain resistance , transconductance and amplification factor of a JFET with the help of following experimentally obtained data.V_{GS      0V                0V               -0.2V}
   V_{DS      7V                15V              15V}
   I_{D       10mA             10.25mA        9.65mA}
6. Draw the circuit of a practical single stage transistor amplifier. Explain the function of each     component.

Q3:- Attempt any two parts of the following :

2*10=20

1.  Describe half-wave rectifier and obtain an expression for the rectification efficiency of the half-wave rectifier is used to supply 12V dc to a resistive load R_L =500Ω. If the forward resistance of diode r_f  is 25Ω , find the rms value of ac voltage supplied to the circuit.
2. Explain the CB configuration of a transistor and draw its input and output characteristics.Describe      current amplification factor α collector current I_{C ,} input resistance r_i and output resistance r_o.
3. Draw the equivalent circuit of an ideal and actual zener diode. Explain V-I characteristics of a zener diode. Describe how it can be used as a shunt regulator.

Q4:- Attempt any two parts of the following :

2*10=20

1. Describe the construction and operating principle of JFET. State the advantage of JFET.  A JFET has a drain current of 5 mA . If  I_{DSS =} 10 mA and V_GS(OFF) = -6V, calculate the value of V_GS and pinch off voltage V_P.
2. Explain the need of transistor biasing circuit and state its essential requirements. Obtain the      expression for the stability factor S for CE configuration.
3. Draw an ac equivalent circuit of a single stage common emitter transistor amplifier and expression      for the voltage gain and power gain . An amplifier has an open circuit gain of 1000, an output resistance of 15Ω  and an input resistance of 7 KΩ  . It is supplied from a signal source of e.m.f 10 mV and internal resistance 3 KΩ . The amplifier feeds a load of 35Ω. Calculate the output voltage and power gain.

Q5:- Attempt any four parts of the following :

2*10=20

1.  What do you understand by an ideal operational amplifier ? Describe its characteristics and discuss lts limitations.In an op-amplifier ,the amplifier gain is 10000. The input series resistance feedback resistance are 100 KΩ and 500 KΩ respectively. If the input voltage is 1.0V, calculate output voltage. 
2. Describe NAND gate and NOR gate and discuss their characteristics. Explain why these are called as universal building blocks.
3. Describe the single variable theorem of Boolean algebra. With the help of truth tables, explain     associative and distributive laws.

.----------------utu previous year question papers of B.tech, Bba, B.com, B.sc and Mba old year question papers Uttarakhand technical University (UTU)--------------------

Practice it and wish you all the best :)