utu previous year question papers uttarakhand technical university b.tech 4th sem (2013-2014) sub: microprocessor and its applications

utu previous year question papers
uttarakhand technical university
b.tech 4th sem (2013-2014)
sub: microprocessor and its applications 

Q1: Attempt any four parts:

1. Give a short note on evolution of microprocessor.
2. Draw the basic block diagram of microprocessor and explain the function of each block in brief. 
3. Explain all types of semiconductor memories in brief.
4. Discuss the organization of semiconductor memory and advantages and disadvantages of SRAM over DRAM.
5. Explain the sequential and parallel types of memory with the help of suitable example.
6. Draw and explain the timing and control unit.

Q2 Attempt any four parts:

1. Draw the basic arhtiecture of 8085 microprocessor.
2. Explain the pin diagram of 8085 microprocessor.
3. Explain the various addressing modes of 8085 microprocessor.
4. Explain the following instruction of 8085 microprocessor.
   a) ADI data
   b) LXI B, 02H
   c) DCRC
   d) RLC
5. Write and assembly language program for te addition of two decimal numbers using 8085 microprocessor.
6. Draw the timing diagram of memory read cycle in 8085 microprocessor.

sub: Microprocessor and its application (utu previous year question papers

utu previous year question papers
sub: Microprocessor and its application
sem 4th , B.tech
back paper examination

time : 3 hrs

calculator is not allowed;

Q1: Attempt any four parts:

1. Draw the block diagram of microprocessor and explain it in brief.
2. Explain the physical address formation with the segment and offset words.
3. Discus the improvement of intel 8086 over intel 8085 microprecessor.
4. Describe the function of the 8086 queue. How does the queue speed up processing.
5. Discuss the features of 8085 interrupts. Also explain the SIM and RIM formats.
6. Describe memory segmentation? How can it generate the physical address, explain with example.

Q2: Attempt any four parts:

1. Draw the architecture of 8086 microprocessor and explain it in brief. 
2. Discuss various types of addressing modes of Intel 8085 with suitable examples.
3. Explain the various data transfer techniques.
4. Draw the pin dia of 8085 microprocessor.
5. explain the minimum mode of operation in 8086 microprocessor.
6. Explain the instruction : SHLD 16-bit addr, DAA, STA 16 bit addr.

ANALOG INTEGRATED CIRCUIT (AIC)

ANALOG INTEGRATED CIRCUIT
(AIC)
SEM-IV, 2013
B TECH EXAMINATION
utu previous year question paper

TIME: 3 hour

Max. Marks: 100

Note: Attempt all the questions. Assume suitable data if necessary.

Attempt any four parts of the following:

1. Explain Slew rate and its effect on operation of Op-amp.
2. Draw and explain the circuit to generate triangular wave using op-amp.
3. Explain source follower circuit. Discuss its input impedance in detail.
4. Explain the common source amplifier and find the expression for gain.
5. Explain about the crossover and harmonic distortion.
6. Draw and explain cascade current mirror circuit.

Electronic device and circuits (utu question paper)

ELECTRONIC DEVICE AND CIRCUIT
SEM-III, 2011-12
UTU PREVIOUS YEAR QUESTION PAPERS

time : 3hr] 

Total marks :100

SECTION A

Q1:- Attempt any four of the following :

1. Distinguish between
   (i) intrinsic semiconductor and extrinsic semiconductor
   (ii) energy level and energy band
2. A silicon p-n junction employs the following doping levels : N_A = 1 x 10⁶ cm^-3 and  N_D = 5 x 10¹⁵ cm^-3 . Determine the hole and electron concentration on the two sides.
    [ For silicon, n_i  = 1.08 x 10¹⁰   cm^-3]
3. Due to manufacturing error, the p-side of a pn junction has not been doped. If    N_D = 3 x 10¹⁶ cm^-3, calculate the built in potential at T = 300 K.
4. In the junction shown in fig 1, the depletion region has a width of b on the n side and a on the p side. Sketch the electric field as a function of x.

   

   FIG.1

5. Find the resistivity of intrinsic Si at 300 K.
   
   ( μ_n = 1350 cm² /V –s and μ_p = 480 cm² /v –s ) and (n₁  = 1.5 x 10¹⁰   cm^-3).
6. Discuss the role of Ebers Moll and Hybrid- pi model used for BJT.

COMMUNICATION ENGINEERING

COMMUNICATION ENGINEERING
SEM-IV, 2012
B.TECH EXAMINATION
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 2 Hours

Total Marks: 50

Attempt any four:

3×4=12

1. What is amplitude modulation and explain the low level and high level A. M. modulation method with the help of block diagram?
2. A modulation signal 10sin (2 Ω×10³t) is used to modulate a carrier signal 20sin (2Ω×10⁴t).Determine the modulation index, percentage modulation, frequencies of the sideband components. What will be the bandwidth of the modulated signal?
3. What is single sideband suppressed carrier modulation? Write one method of SSB generation and why is SSB not used for broadcasting?
4. What is DSB-SC? Explain the generation of DSB-SC with proper waveform and diagram.
5. What is VSB-SC? Explain the generation and detection of VSB-SC with suitable waveforms and diagram.
6. Calculate the percentage power saving when the carrier and one of the side bands are suppressed in an AM wave modulated to a depth of (1)100% (2)50%.

COMMUNICATION ENGINEERING

COMMUNICATION ENGINEERING
SEM-IV, 2013
B.TECH EXAMINATION
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Marks: 50

Time: 2 hrs

Q1: Attempt any four

1. Why do we require modulation?
2. Derive the equation that represents amplitude modulation?
3. Draw the block diagram of superheterodyne receiver.
4. Explain a method to demodulate single sideband signal.
5. Explain the square law diode modulator for AM generation.
6. Derive the power relation for amplitude modulated wave.

ELECTRO-MECHANICAL ENERGY CONVERSION-II

ELECTROMECHANICAL ENERGY CONVERSION-II
SEM-IV, 2013
B.TECH EXAMINATION
UTTARAKHAND TECHNICAL UNIVERSITY
utu question paper

Attempt any four:

5*4=20

1. How a synchronous machine is different from an Induction machine?
2. What is known as Hunting in Synchronous machine?
3. Explain the working principle of a synchronous motor with neat diagram.
4. Explain the principle of operation of infinite bus.
5. Explain what is armature reaction in synchronous machine.
6. What are the conditions necessary for the parallel operation of synchronous generators?

ELEMENTS OF POWER SYSTEM

ELEMENTS OF POWER SYSTEM
SEM-IV, 2013
B.TECH EXAMINATION
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 3 hours

Total Marks: 100

Attempt any four:

5*4=20

1. What do you understand by single line diagram of a power system?
2. Explain circuit breaker and isolator. 
3. Define terms- Skin effect, Kelvin's law, Proximity effect.
4. Write the configurations of transmission line.
5. Briefly describe the power system elements.
6. Explain the different kinds of supply system.

MICROPROCESSORS & ITS APPLICATIONS

MICROPROCESSORS & ITS APPLICATION
SEM-IV, 2013
B.TECH EXAMINATION
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 3 Hours

Total Marks: 100

Attempt any four:

5*4=20

1. What is a microprocessor?
2. What is the function of accumulator?
3. What is the difference between ROM and RAM?
4. How the advances microprocessors were evolved? 
5. What are the basic building blocks of a microprocessor?
6. Differentiate between EEPROM and EPROM?

Electrical and Electronics Engg. Materials

ELECTRICAL & ELECTRONICS ENGINEERING MATERIALS
SEM-IV, 2013
B.TECH EXAMINATION
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 2 hrs

Total marks: 50

Note: Attempt all questions.

Q1:- Attempt any four:

1. State and explain Bragg's law?
2. What do you understand by structural Imperfections
3. How the bonds in solids are formed? Explain.
4. Explain how materials can be classified into three groups on the basis of atomic structure?
5. Explain the factors which change the resistivity of a conducting material?
6. What is polarization? Explain.

ELECTRO MECHANICAL ENERGY CONVERSION-II

ELECTRO MECHANICAL ENERGY CONVERSION-II
SEM-IV, 2012
B.TECH
UTTARAKHAND TECHNICAL UNIVERSITY
(UTU)

Time: 3 Hours

Total Marks: 100

Attempt any four questions

1. Explain the constructional features of Synchronous Machines.
2. What do you mean by pitch factor in ac windings? Derive its expression.
3. What do you mean by armature reaction? For lagging type of load what will be its nature?
4. What do you mean by synchronizing of Alternators? Why synchronization is necessary?
5. Derive from the fundamental, generalized equation of the EMF generated in the non-salient pole synchronous generator.

COMMUNICATION ENGINEERING utu previous year question papers

communication eng.
sem 4th
utu previous year question paper

Time: 3 hours

Total marks: 100

Note: Draw diagrams and waveform wherever needed.

Attempt any three:

1. What is amplitude modulation? Explain its generation.
2. Explain DSBSC with its generation.
3. What is super heterodyne receiver?
4. With the help block diagram explain working of automatic frequency control unit.

ELECTROMECHANICAL ENERGY CONVERSION-I (EMEC-I)

ELECTROMECHANICAL ENERGY 

CONVERSION-I (EMEC-I)

2011-12 

B.TECH

UTTARaKHAND TECH. UNIVERSITY
utu previous year question papers

Time: 3 Hours

Total Marks :100

SECTION A

Attempt any 4 question. Each question carries 5 marks :

1. Show that the energy stored in a magnetic field is equal to the area between the Ψ-i curve for the system and the flux linkage (Ψ) axis.
2. Show that the field energy in a magnetic system is given by:
   W_f = 1/2Li² = 1/2 Ψi = (1/2L)Ψ².
3. Distinguish between singly excited and doubly excited systems.
4. For a singly excited linear magnetic system, derive an expression for the electromagnetic torque.
5. Define field energy and co-energy.
6. Why most practical energy conversion devices use magnetic field as the coupling medium between electrical and mechanical systems?

SIGNALS & SYSTEMS (utu previous year question paper)

SIGNALS & SYSTEMS
B.Tech Examination
SEM-IV,2011
UTTARAKHAND TECHNICAL UNIVERSITY
utu previous year question papers

Time: 3 Hours

Total Marks: 100

Section A

Attempt any four of the following:

1. With suitable example define the periodic and non-periodic signals.
2. Differentiate between the following systems:
   (i) Static systems and dynamic systems
   (ii) Stable Systems and unstable systems.
3. Consider the system : Y(t) = sin[x(t + 2)] determine whether the system is
   (i) Linear
   (ii) Stable
   (iii) Casual
   (iv) Time invariant
   (v) Memoryless.
4. Check the following system for time invariance
   (i) Y(t) = sin [x (t)]
   (ii) Y[n] = nx[n]
5. Check the following system for stability
   (i) Y(t) = e^x(t)
   (ii) X(n) = Aⁿ u(n)
6. Determine the infinite power P^∞ and infinite energy E^∞ of the following signals:
   (i) X(t) = e^-2t u(t)
   (ii) X[n] =(1/2ⁿ)u(n)

NETWORK ANALYSIS & SYNTHESIS ,(NAS)

NETWORK ANALYSIS & SYNTHESIS
(NAS)
B.Tech Examination
SEM.III, 2012-13
UTTARAKHAND TECHNICAL UNIVERSITY(UTU)

Time: 3 Hours

Total Marks  :100

Section A

Attempt any four of the following:

1. List the essential properties o a linear network systems.
2. State and explain Thevenin's Theorem. Can a Thevenin theorem be applied to a linear load only? Give reasons in support of your answer.
3. Define node, cutset, and twig.
4. Define the properties of driving point impedance function.
5. List the properties of the Laplace transform and its inverse, explaining time scaling and frequency scaling.
6. Which of the given polynomial is a Hurwitz polynomial?
   (i)  s³ + 4s² + 5s +2
   (ii) s⁴ + 7s³ + 6s² + 21s + 8

ELECTRONIC DEVICES & CIRCUITS (EDC)

ELECTRONIC DEVICE & CIRCUIT
(EDC)
B.Tech EXAMINATION
SEM III, 2012-13
UTTARAKHAND TECHNICAL UNIVERSITY(UTU)

Time: 3 hours

Total marks: 100

Section A

Attempt any four of the following:

1.    Why space charge region is called as depletion region? Which types of carriers are present in the space charge region?

2.    Discuss the working of Schottky diode and hot carrier diode in brief.

3.    A diode is biased at a current of 1 mA.
(a) Determine the current change if V_D changes by 1 mV.
(b) Determine the voltage change if I_D changes by 10%.

4.    Give the Barkhausen condition required in order for sinusoidal oscillator to be sustained.

5.    Derive an expression for the voltage gain of a CE transistor amplifier in terms of h-parameters.

6.    What is the advantage of using quaternary alloy in fabricating LEDs?

ELECTRICAL & ELECTRONICS ENGINEERING

ELECTRICAL & ELECTRONICS ENGINEERING

B.TECH EXAMINATION
SEM IV, 2011
UTTARAKHAND TECHNICAL UNIVERSITY

Time: 2 hours

Total marks:50

Section A

Attempt any four question:

1. What are miller indices? Sketch the planes (0 1 1), (1 0 0) and (1 2 1) on FCC crystal.
2. Copper has a FCC structure and its atomic radius is 1.278 A. Calculate the density of copper. Given atomic weight of copper = 63.5.
3. Derive the atomic packing factor for HCP crystal.
4. State Bragg's Law and show how it can be used to determine lattice parameters.
5. Explain with diagrams point, line and surface imperfections.
6. Write a short note on bonding in solids.

Utu previous year question paper sub:- Electronic Measurement and Instrumentation

Utu previous year question paper

sub:- Electronic Measurement and Instrumentation

B.tech sem III 

time 3 hrs

total marks 100}

Q1:- Attempt  any four parts of the following .

1.       Differentiate between the following terminology

(i)        Reproducibility and Drift

(ii)       Dead zone and Hysteresis.

2.       Discuss the advantages and disadvantages associated with capacitive transducers.

3.       Explain the working principle of Kelvin Bridge.

4.       Mention the merits and demerits of digital measurement over analog measurements.

5.       Explain how measurement of high resistances can be done.

6.    Classify transducers by taking suitable examples and mention their area of application.

ELECTROMECHANICAL ENERGY CONVERSION-I (EMEC-I)

ELECTROMECHANICAL ENERGY 

CONVERSION-I (EMEC-I)

2012

Uttarkhand Tech. university
 utu previous year question papers

Total marks :100

SECTION A

Q1:- Attempt any two of the following :

1. Define energy and co-energy. What is significance of co-energy? Show that the field energy in a linear magnetic system is given by W_f = 1/2Li² = 1/2 Ψi = (1/2L)Ψ².
2. Derive an expression for the torque in the doubly excited system having salient pole type of stator as well as well as rotor. State the assumption made.
3. For an electromagnetic system, show that the mechanical work done is equal to the area enclosed between two magnetization curve at open and closed position of the armature and  Ψ-I locus during the armature movement.

ELEMENTS OF POWER SYSTEM

UTTARAKHAND TECH. UNIVERSITY

utu previous year question papers

B TECH (sem iv),2012

SUB:- elements of power system

time : 3hr]

Total marks :100

SECTION A

Q1:- Attempt any four of the following :

1. Compare overhead transmission system with underground transmission system with underground  transmission system on atleast 10 major grounds.
2. Differentiate the following:(a) Skin effect and proximity effect.
   (b) Circuit breaker and isolator.
3. What is the % saving in feeder copper if the line voltage in a 2-wire dc system be raised from 220 volts for the same power transmitted over same distance and having the same power loss?
4. State Kelvin's law for obtaining the size of the conductor for transmission. Discuss its limitations.
5. Describe ACSR conductor used in transmission line.
6. The cost of 3-Ф overhead line having cross-section area 'a' Cm² is Rs. (500+2,000a) per kilometer. Calculate the most economical current density for the most economical current density for the conductor if the rate of interest and depreciation is 12% per annum and the cost of energy wasted is 5 paise per kWh. The resistivity of conductor may be taken as (1.7/a) ohm/km. Take load factor of 12%.