Sunday, 28 July 2013

FUNDAMENTAL OF ELECTRONICS

FUNDAMENTAL OF ELECTRONICS ENGINEERING
SEM-I, 2011
UTU PREVIOUS YEAR QUESTION PAPERS

Time: 3 hours
Total marks: 100
Attempt any four parts:
  1. What happens to the conductivity of semiconductors with the rise in temperature? Compare with the conductivity of metals.
  2. What is meant by Fermi level in semiconductor?
  3. At room temperature, the reverse saturation current is 0.3µA when a reverse bias is applied to a Ge diode. Find the value of current flowing in diode when 0.15V forward bias is applied.
  4. Define conductivity. Derive the expression of conductivity in intrinsic and extrinsic semiconductors.
  5. Explain the formation of depletion layer in a p-n junction diode.
  6. Explain the transition capacitance and diffusion capacitance of a p-n junction diode.