important question for viva test of workshop

                  Utu previous year question papers.

some most important question for viva test of workshop.

1. What is turning?
2. Write or tell us operation of lathe machine?
3. Write name of 10 parts of lathe machine.
4. What is feed?
5. What is depth of cut?
6. What is the formula of cutting speed of lathe machine?
7. Write the formula of taper angle?
8. How you denote Lathe machine on basis of size?
9. What is function of Lathe machine?
10. Which shape of Job can be made by Lathe Machine?
11. Which dimensions can be measured by Vernier caliper?
12. What is least count?
13. What is the least count of vernier caliper?
14. Which type of material can be processed under lathe machine?
15. What is the least count of micrometer 

SOLID STATE DEVICES AND SEMICONDUCTOR (SSDC)

SOLID STATE DEVICES AND SEMICONDUCTOR (SSDC)
SEM-IV, 2013
UTU PREVIOUS YEAR QUESTION PAPERS

TIME: 2 hour

Max. Marks: 50

Note: Attempt all the questions. Assume suitable data if necessary.

 Attempt any four parts of the following:

1. Explain briefly about the Zener diode as shunt regulator.
2. Describe about the superconductor materials.
3. A LED materials energy gap equals 2.5 eV. What wavelength will it radiate?
4. Write a short note on Insulated Gate Bipolar Transistor (IGBT).
5. Write the merits and demerits of Gunn diode.
6. Name and explain the three conditions for lasing action.

ANALOG INTEGRATED CIRCUIT (AIC)

ANALOG INTEGRATED CIRCUIT
(AIC)
SEM-IV, 2013
B TECH EXAMINATION
utu previous year question paper

TIME: 3 hour

Max. Marks: 100

Note: Attempt all the questions. Assume suitable data if necessary.

Attempt any four parts of the following:

1. Explain Slew rate and its effect on operation of Op-amp.
2. Draw and explain the circuit to generate triangular wave using op-amp.
3. Explain source follower circuit. Discuss its input impedance in detail.
4. Explain the common source amplifier and find the expression for gain.
5. Explain about the crossover and harmonic distortion.
6. Draw and explain cascade current mirror circuit.

Electronic device and circuits (utu question paper)

ELECTRONIC DEVICE AND CIRCUIT
SEM-III, 2011-12
UTU PREVIOUS YEAR QUESTION PAPERS

time : 3hr] 

Total marks :100

SECTION A

Q1:- Attempt any four of the following :

1. Distinguish between
   (i) intrinsic semiconductor and extrinsic semiconductor
   (ii) energy level and energy band
2. A silicon p-n junction employs the following doping levels : N_A = 1 x 10⁶ cm^-3 and  N_D = 5 x 10¹⁵ cm^-3 . Determine the hole and electron concentration on the two sides.
    [ For silicon, n_i  = 1.08 x 10¹⁰   cm^-3]
3. Due to manufacturing error, the p-side of a pn junction has not been doped. If    N_D = 3 x 10¹⁶ cm^-3, calculate the built in potential at T = 300 K.
4. In the junction shown in fig 1, the depletion region has a width of b on the n side and a on the p side. Sketch the electric field as a function of x.

   

   FIG.1

5. Find the resistivity of intrinsic Si at 300 K.
   
   ( μ_n = 1350 cm² /V –s and μ_p = 480 cm² /v –s ) and (n₁  = 1.5 x 10¹⁰   cm^-3).
6. Discuss the role of Ebers Moll and Hybrid- pi model used for BJT.

COMPUTER GRAPHIC

COMPUTER GRAPHIC

SEM-V, 2012
UTU PREVIOUS YEAR QUESTION PAPERS

Time :3 hrs

Total marks :100

Attempt any two of the following:

1. List and explain some applications for large screen displays.
2. Define the following terms:(i) Primitive devices(ii) Display file structure(iii) Display control text
3. Set up a parallel version of Bresenham's algorithm for straight lines of any slope.

Attempt any two of the following: 

1. Discuss various methods of storing the edge list and their relative merits for pattern filling.
2. Explain the following:(i) Segments(ii) Segment table(iii) Creating, deleting and renaming segments.